News Article
Motorola`s Semiconductor Products Sector (SPS) In Collaboration With
Motorola's Semiconductor Products Sector (SPS) in collaboration with
Motorola Labs has produced its first 1Mbit MRAM (magnetoresistive random
access memory) universal memory chip.
SPS' MRAM technology director, Saied Tehrani, comments:
"We believe the alliance will enable us to penetrate the broader portion of
the memory market and contribute to faster market acceptance of the MRAM
technology," says Rick Sivan, vice president and director of Motorola's
Embedded Memory Center.
The MRAM is based on a memory cell defined by a single transistor (1T) and a
single magnetic tunnel junction (MTJ) with read/write cycles less than 50ns.
This is claimed as the largest MRAM demonstration to date and the first to
be integrated with CMOS (0.6microns) using copper interconnect technology.
The technology was developed in part with funding from the US Defense
Advanced Research Projects Agency (DARPA).
UMC has qualified Unitive Taiwan's eutectic wafer bumping technology.
Following on from last week's Bulletin, Fujitsu tells us that it expects to
fix its 90nm process by the end of the year, ready to accept tapes by March
2003. Shipment of these early products would be in June 2003.
A European "Fifth Framework Programme" has been set up to develop
wafer-to-wafer bonding techniques for long-term vacuum encapsulation. The
aim is to create micro-electro-mechanical system (MEMS) vacuum cavities. The
vacuum wafer bonding will be optimised using eutectic bonding in combination
with getter materials in the cavity. A hermetic feed-through will also be
developed for vertical electrical vias through the cap wafer. The project
applications will be to RF switch and high frequency resonators for telecoms
and consumer use. Also a pressure sensor for high-reliability avionics and
industrial applications will be produced.
The leader of the work will be STMicroelectronics' MEMS Development unit at
Agrate, Italy. Other contributors will be Saes Getters, Thales Avionics, EV
Group E Thallner, Pavia University, and Fraunhofer Institute for Silicon
Technology (ISIT).
EMCORE has signed a $4m contract with the US Defense Advanced Research
Projects Agency (DARPA) concerning wide bandgap gallium nitride (GaN)
semiconductor-based high power, high frequency electronics for use in
military applications. EMCORE has already worked with 50mm wafers and the
plan is to push this to 100mm. EMCORE produces GaN FET epitaxial wafers
using its TurboDisc tool.
ChipPAC has developed a high density, high reliability lead free (Pb-free)
chip scale package (CSP) for mobile applications, including RF modules. The
CSP has 341 lead free solder balls at 0.5mm pitch with a Moisture Resistance
Test (MRT) Level 1 specification.
the memory market and contribute to faster market acceptance of the MRAM
technology," says Rick Sivan, vice president and director of Motorola's
Embedded Memory Center.
The MRAM is based on a memory cell defined by a single transistor (1T) and a
single magnetic tunnel junction (MTJ) with read/write cycles less than 50ns.
This is claimed as the largest MRAM demonstration to date and the first to
be integrated with CMOS (0.6microns) using copper interconnect technology.
The technology was developed in part with funding from the US Defense
Advanced Research Projects Agency (DARPA).
UMC has qualified Unitive Taiwan's eutectic wafer bumping technology.
Following on from last week's Bulletin, Fujitsu tells us that it expects to
fix its 90nm process by the end of the year, ready to accept tapes by March
2003. Shipment of these early products would be in June 2003.
A European "Fifth Framework Programme" has been set up to develop
wafer-to-wafer bonding techniques for long-term vacuum encapsulation. The
aim is to create micro-electro-mechanical system (MEMS) vacuum cavities. The
vacuum wafer bonding will be optimised using eutectic bonding in combination
with getter materials in the cavity. A hermetic feed-through will also be
developed for vertical electrical vias through the cap wafer. The project
applications will be to RF switch and high frequency resonators for telecoms
and consumer use. Also a pressure sensor for high-reliability avionics and
industrial applications will be produced.
The leader of the work will be STMicroelectronics' MEMS Development unit at
Agrate, Italy. Other contributors will be Saes Getters, Thales Avionics, EV
Group E Thallner, Pavia University, and Fraunhofer Institute for Silicon
Technology (ISIT).
EMCORE has signed a $4m contract with the US Defense Advanced Research
Projects Agency (DARPA) concerning wide bandgap gallium nitride (GaN)
semiconductor-based high power, high frequency electronics for use in
military applications. EMCORE has already worked with 50mm wafers and the
plan is to push this to 100mm. EMCORE produces GaN FET epitaxial wafers
using its TurboDisc tool.
ChipPAC has developed a high density, high reliability lead free (Pb-free)
chip scale package (CSP) for mobile applications, including RF modules. The
CSP has 341 lead free solder balls at 0.5mm pitch with a Moisture Resistance
Test (MRT) Level 1 specification.
